FinFET — A Self - Aligned Double - Gate MOSFET Scalable to 20 nm
نویسندگان
چکیده
MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.
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